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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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1N4007 |
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DC COMPONENTS
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157 132
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1.71
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1N4007 |
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GENERAL SEMICONDUCTOR
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1N4007 |
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LITE ON OPTOELECTRONICS
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1N4007 |
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PANJIT
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1N4007 |
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FSC
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1N4007 |
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MCC
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1N4007 |
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DIC
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1N4007 |
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FAIR
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1N4007 |
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PHILIPS
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1N4007 |
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MIC
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304 881
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1.30
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1N4007 |
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DIOTEC
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56 796
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2.74
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1N4007 |
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ON SEMICONDUCTOR
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1N4007 |
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LD
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1N4007 |
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JGD
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1N4007 |
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MING SHUN
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1N4007 |
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MS
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1N4007 |
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QUAN-HONG
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1N4007 |
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XR
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1N4007 |
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GALAXY
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1N4007 |
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COMPACT TECHNOLOGY
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1N4007 |
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DC COMPONENTS
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1N4007 |
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FAIRCHILD
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312
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1N4007 |
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GENERAL SEMICONDUCTOR
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1
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1N4007 |
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LITE ON OPTOELECTRONICS
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1N4007 |
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MASTER INSTRUMENT CORPORATION
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI)
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1N4007 |
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ON SEMICONDUCTOR
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1N4007 |
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PANJIT
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266 666
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1N4007 |
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PHILIPS
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF.
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1N4007 |
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YANGJIE SEMICONDUCT
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1N4007 |
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Fairchild Semiconductor
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
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1N4007 |
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MICROSEMI CORP
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1N4007 |
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ТАЙВАНЬ(КИТАЙ)
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1N4007 |
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GD
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1N4007 |
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JC
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1N4007 |
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KINGTRONICS
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1N4007 |
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YJ
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96 712
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1.30
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1N4007 |
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DIODES INC.
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1N4007 |
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MIG
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1N4007 |
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MICRO COMMERCIAL COMPONENTS
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1N4007 |
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MOTOROLA
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1N4007 |
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YJ ELE-NIC CORP
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1N4007 |
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RECTIFIER
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1N4007 |
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EXTRA COM-NTS
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1N4007 |
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GALAXY ELECTRICAL
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1N4007 |
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GEMBIRD
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1N4007 |
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ТОМИЛИНО
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1N4007 |
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EXTRA
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1N4007 |
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КИТАЙ
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800
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6.12
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1N4007 |
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DIOTEC SEMICONDUCTOR
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1N4007 |
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MD
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1N4007 |
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86 047
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1.72
>100 шт. 0.86
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1N4007 |
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ONS-FAIR
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1N4007 |
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ONS
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1N4007 |
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ELZET
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1N4007 |
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GALAXY ME
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1N4007 |
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LGE
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41 166
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1.55
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1N4007 |
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HOTTECH
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84 712
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1.54
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1N4007 |
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KLS
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144 000
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2.95
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1N4007 |
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YS
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1N4007 |
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YANGJIE
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268 000
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1.58
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1N4007 |
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YANGJIE (YJ)
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1N4007 |
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MC
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1N4007 |
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FAIRCHILD
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1N4007 |
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WUXI XUYANG
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22 441
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1.78
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1N4007 |
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KUU
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1
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1.06
>100 шт. 0.53
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1N4007 |
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CHINA
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15 337
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1.02
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1N4007 |
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SUNRISETRON
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1N4007 |
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UNKNOWN
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1N4007 |
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BILIN
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1N4007 |
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KEHE
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1N4007 |
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1
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1N4007 |
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BL
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1N4007 |
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SUNTAN
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131 780
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1.80
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAI/QTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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800
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15.30
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NATIONAL SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NXP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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PHILIPS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DC COMPONENTS
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7 143
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5.61
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FSC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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UTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DIOTEC
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17 798
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2.97
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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МИНСК
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIRCHILD
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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OTHER
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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12 002
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1.13
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|
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
|
---
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NO TRADEMARK
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MULTICOMP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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HOTTECH
|
6 239
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1.69
|
|
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KLS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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КИТАЙ
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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CHINA
|
19 200
|
1.28
|
|
|
|
2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ZH
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881 H-1AC-C 12VDC |
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SONGCHU
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MJE15032 |
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Транзистор биполярный большой мощности S-N 250В 8A
|
ON SEMICONDUCTOR
|
14
|
239.70
|
|
|
|
MJE15032 |
|
Транзистор биполярный большой мощности S-N 250В 8A
|
|
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65.76
|
|
|
|
MJE15032 |
|
Транзистор биполярный большой мощности S-N 250В 8A
|
ON SEMICONDUCTOR
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|
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MJE15032 |
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Транзистор биполярный большой мощности S-N 250В 8A
|
ISC
|
800
|
56.29
|
|
|
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TLP521-1GB |
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Оптопара транзисторная
|
TOSHIBA
|
4 000
|
55.10
|
|
|
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TLP521-1GB |
|
Оптопара транзисторная
|
|
63
|
52.80
|
|
|
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TLP521-1GB |
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Оптопара транзисторная
|
TOS
|
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TLP521-1GB |
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Оптопара транзисторная
|
ТАИЛАНД
|
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TLP521-1GB |
|
Оптопара транзисторная
|
ISOCOM
|
164
|
15.74
|
|
|
|
TLP521-1GB |
|
Оптопара транзисторная
|
|
|
|
|
|
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TLP521-1GB |
|
Оптопара транзисторная
|
CHINA
|
560
|
27.22
|
|
|
|
TLP521-1GB |
|
Оптопара транзисторная
|
ISO
|
|
|
|
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TLP521-1GB |
|
Оптопара транзисторная
|
1
|
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