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Rds On (Max) @ Id, Vgs | 112 mOhm @ 3.4A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET P-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Тип монтажа | Поверхностный |
Power - Max | 2W |
Input Capacitance (Ciss) @ Vds | 1110pF @ 25V |
Gate Charge (Qg) @ Vgs | 37nC @ 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 3.4A |
Drain to Source Voltage (Vdss) | 40V |
Корпус (размер) | Micro6™(TSOP-6) |
Корпус | Micro6™(TSOP-6) |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
LQW18AN33NG00D | MURATA | 2 664 | 10.07 | |||||
LQW18AN33NG00D | MUR | 27 094 | 3.30 | |||||
LQW18AN33NG00D | ||||||||
SN74LVC1G08DCKR | 18.60 | |||||||
SN74LVC1G08DCKR | TEXAS INSTRUMENTS | 2 400 | 12.79 | |||||
SN74LVC1G08DCKR | TEXAS INSTRUMENTS | 10 892 | ||||||
SN74LVC1G08DCKR | TEXAS | |||||||
SN74LVC1G08DCKR | YOUTAI | 14 191 | 4.05 | |||||
SN74LVC1G08DCKR | UMW | |||||||
SN74LVC1G08DCKR | UMW-YOUTAI | 288 | 5.90 |
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