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Vgs(th) (Max) @ Id | 4V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 75A |
Drain to Source Voltage (Vdss) | 55V |
Rds On (Max) @ Id, Vgs | 4.9 mOhm @ 75A, 10V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) @ Vgs | 180nC @ 10V |
Input Capacitance (Ciss) @ Vds | 4780pF @ 25V |
Power - Max | 230W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 |
Корпус | TO-220AB |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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BZX55-C6V2 | GENERAL SEMICONDUCTOR |
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BZX55-C6V2 | DC COMPONENTS | 15 398 | 1.13 | ||||
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BZX55-C6V2 | VISHAY |
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BZX55-C6V2 |
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BZX55-C6V2 | GENERAL SEMICONDUCTOR |
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DE1E3KX222MA4BN01F | MUR | 93 122 | 6.36 | |||||
DE1E3KX222MA4BN01F |
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DE1E3KX222MA4BN01F | MURATA | 13 502 | 9.22 | |||||
DE1E3KX222MA4BN01F | MURATA |
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DE1E3KX222MA4BN01F | MURATA* |
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DE1E3KX222MA4BN01F | 0.00 |
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GRM31MR71H105KA88K |
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Керамический конденсатор 1 мкФ 50 В | MUR |
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GRM31MR71H105KA88K |
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Керамический конденсатор 1 мкФ 50 В | Murata Electronics North America |
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HIP4081AIBZ | INTERSIL |
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HIP4081AIBZ |
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712.00 | ||||||
HIP4081AIBZ | RENESAS | 180 | 246.10 | |||||
HIP4081AIBZ | 4-7 НЕДЕЛЬ | 536 |
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RC1206JR-07120K |
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Чип-резистор 0.125/0.25Вт,1206,5%, 120 К | VITRAMON |
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RC1206JR-07120K |
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Чип-резистор 0.125/0.25Вт,1206,5%, 120 К | VITROHM |
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RC1206JR-07120K |
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Чип-резистор 0.125/0.25Вт,1206,5%, 120 К | VITROHM |
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RC1206JR-07120K |
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Чип-резистор 0.125/0.25Вт,1206,5%, 120 К | YAGEO |
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RC1206JR-07120K |
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Чип-резистор 0.125/0.25Вт,1206,5%, 120 К | YAGEO | 94 814 |
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Корзина
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