| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Power - Max | 350mW |
| Frequency - Transition | 100MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23 |
| Product Change Notification | Mold Compound Change 12/Dec/2007 |
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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
|
Купить
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AOZ1031AI |
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Alpha & Omega Semiconductor Inc
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AOZ1031AI |
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AOZ1031AI |
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A&O
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AOZ1031AI |
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AOZ1031AI |
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4-7 НЕДЕЛЬ
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GRM319R71H224KA01D |
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Керамический конденсатор 0.22 мкФ 50 В
|
MUR
|
6 973
|
16.33
|
|
|
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GRM319R71H224KA01D |
|
Керамический конденсатор 0.22 мкФ 50 В
|
Murata Electronics North America
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GRM319R71H224KA01D |
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Керамический конденсатор 0.22 мкФ 50 В
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GRM319R71H224KA01D |
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Керамический конденсатор 0.22 мкФ 50 В
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MURATA
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MJD122T4 |
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ST MICROELECTRONICS
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8 966
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28.24
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MJD122T4 |
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ON SEMICONDUCTOR
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MJD122T4 |
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MOTOROLA
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MJD122T4 |
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1 394
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37.72
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|
|
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MJD122T4 |
|
|
ST MICROELECTRONICS SEMI
|
29
|
|
|
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MJD122T4 |
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STMicroelectronics
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15 992
|
62.53
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|
|
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MJD122T4 |
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ST MICROELECTRO
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MJD122T4 |
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<>
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MJD122T4 |
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RUME
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19 992
|
7.21
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|
|
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MMBTA56 |
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FAIR
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|
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MMBTA56 |
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NATIONAL SEMICONDUCTOR
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MMBTA56 |
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22 400
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1.10
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MMBTA56 |
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MICRO COMMERCIAL COMPONENTS
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MMBTA56 |
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MCC
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MMBTA56 |
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FAIRCHILD
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MMBTA56 |
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FAIRCHILD
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5 008
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MMBTA56 |
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MICRO COMMERCIAL COMPONENTS
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MMBTA56 |
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NATIONAL SEMICONDUCTOR
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MMBTA56 |
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Fairchild Semiconductor
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MMBTA56 |
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ONS
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MMBTA56 |
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DIOTEC
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4 696
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2.39
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MMBTA56 |
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YJ
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5 078
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3.92
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MMBTA56 |
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HOTTECH
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MMBTA56 |
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1
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MMBTA56 |
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UMW
|
112
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2.07
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MMBTA56 |
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YANGZHOU YANGJIE
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|
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MMBTA56 |
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JSCJ
|
4 792
|
3.94
|
|
|
|
|
TIP147 |
|
Транзистор биполярный — составной PNP Darl, 100V, 10A, 125W (Comp. TIP142)
|
FAIR
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|
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|
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TIP147 |
|
Транзистор биполярный — составной PNP Darl, 100V, 10A, 125W (Comp. TIP142)
|
ST MICROELECTRONICS
|
|
|
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|
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TIP147 |
|
Транзистор биполярный — составной PNP Darl, 100V, 10A, 125W (Comp. TIP142)
|
|
2 923
|
21.33
|
|
|
|
|
TIP147 |
|
Транзистор биполярный — составной PNP Darl, 100V, 10A, 125W (Comp. TIP142)
|
STMICROELECTRONICS
|
|
|
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TIP147 |
|
Транзистор биполярный — составной PNP Darl, 100V, 10A, 125W (Comp. TIP142)
|
ON Semiconductor
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|
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TIP147 |
|
Транзистор биполярный — составной PNP Darl, 100V, 10A, 125W (Comp. TIP142)
|
КИТАЙ
|
|
|
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TIP147 |
|
Транзистор биполярный — составной PNP Darl, 100V, 10A, 125W (Comp. TIP142)
|
ST MICROELECTRONICS SEMI
|
24
|
|
|
|
|
|
TIP147 |
|
Транзистор биполярный — составной PNP Darl, 100V, 10A, 125W (Comp. TIP142)
|
ST MICROELECTRO
|
|
|
|
|
|
|
TIP147 |
|
Транзистор биполярный — составной PNP Darl, 100V, 10A, 125W (Comp. TIP142)
|
MULTICOMP
|
|
|
|
|
|
|
TIP147 |
|
Транзистор биполярный — составной PNP Darl, 100V, 10A, 125W (Comp. TIP142)
|
MOSPEC
|
|
|
|
|
|
|
TIP147 |
|
Транзистор биполярный — составной PNP Darl, 100V, 10A, 125W (Comp. TIP142)
|
1
|
|
|
|
|
|
|
TIP147 |
|
Транзистор биполярный — составной PNP Darl, 100V, 10A, 125W (Comp. TIP142)
|
JSCJ
|
14
|
37.52
|
|
Версия для печати
