| |
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
|
|
 |
K6R4008V1D-KI10 |
|
SRAM 512K x 8, 3.3V, 10ns
|
|
|
427.36
|
|
|
|
|
K6R4008V1D-KI10 |
|
SRAM 512K x 8, 3.3V, 10ns
|
SAM
|
|
|
|
|
|
|
K6R4008V1D-UI10 |
|
SRAM 512K x 8, 3.3V, 10ns, Pb free
|
SAMSUNG
|
|
|
|
|
|
|
K6R4008V1D-UI10 |
|
SRAM 512K x 8, 3.3V, 10ns, Pb free
|
SAMSUNG
|
|
|
|
|
|
|
K6R4008V1D-UI10 |
|
SRAM 512K x 8, 3.3V, 10ns, Pb free
|
|
|
448.76
|
|
|
|
|
K6R4008V1D-UI10 |
|
SRAM 512K x 8, 3.3V, 10ns, Pb free
|
SAM
|
|
|
|
|
|
|
K6R4008V1D-UI10 |
|
SRAM 512K x 8, 3.3V, 10ns, Pb free
|
ТАИЛАНД
|
|
|
|
|
|
|
K6R4016C1D-UC10 |
|
SRAM 256K x 16 5.0V High Speed 10ns
|
SAMSUNG
|
|
|
|
|
|
|
K6R4016C1D-UC10 |
|
SRAM 256K x 16 5.0V High Speed 10ns
|
|
|
489.04
|
|
|
|
|
K6R4016C1D-UI10 |
|
SRAM 256K x 16 5.0V High Speed 10ns
|
SAMSUNG
|
|
|
|
|
|
|
K6R4016C1D-UI10 |
|
SRAM 256K x 16 5.0V High Speed 10ns
|
SAM
|
|
|
|
|
|
|
K6R4016C1D-UI10 |
|
SRAM 256K x 16 5.0V High Speed 10ns
|
|
|
513.40
|
|
|
|
|
K6R4016C1D-UI10 |
|
SRAM 256K x 16 5.0V High Speed 10ns
|
КИТАЙ
|
|
|
|
|
|
|
K6R4016C1D-UI10 |
|
SRAM 256K x 16 5.0V High Speed 10ns
|
SAMSUNG
|
|
|
|
|
|
|
K6R4016V1D-UI10 |
|
Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
|
SAMSUNG
|
|
|
|
|
|
|
K6R4016V1D-UI10 |
|
Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
|
|
|
465.48
|
|
|
|
|
K6R4016V1D-UI10 |
|
Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
|
SAM
|
|
|
|
|
|
|
K6R4016V1D-UI10 |
|
Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
|
КИТАЙ
|
|
|
|
|
|
|
K6R4016V1D-UI10 |
|
Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
|
SAMSUNG
|
|
|
|
|
|
|
K6R4016V1D-UI10 |
|
Память статическая 256K x 16, Vcc=3.3V (-40 +85 C) PB-free
|
КОРЕЯ РЕСПУБЛИК
|
|
|
|
|
|
|
M24512-WMW6 |
|
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
M24512-WMW6 |
|
|
|
|
179.08
|
|
|
|
|
M24C02-WBN6 |
|
|
ST MICROELECTRONICS
|
192
|
108.24
|
|
|
|
|
M24C02-WBN6 |
|
|
|
3
|
11.66
|
|
|
|
|
M24C02-WBN6 |
|
|
STMicroelectronics
|
|
|
|
|
|
|
M24C02-WBN6 |
|
|
STMICROELECTR
|
|
|
|
|
|
|
M25P10-AVMN6 |
|
ИМС Flash 2,7V 1Mbit 50MHz SO8978
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
M25P10-AVMN6 |
|
ИМС Flash 2,7V 1Mbit 50MHz SO8978
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
|
M25P10-AVMN6 |
|
ИМС Flash 2,7V 1Mbit 50MHz SO8978
|
|
|
272.24
|
|
|
|
|
M25P10-AVMN6 |
|
ИМС Flash 2,7V 1Mbit 50MHz SO8978
|
MICRON
|
11
|
60.44
|
|
|
|
|
M25P10-AVMN6 |
|
ИМС Flash 2,7V 1Mbit 50MHz SO8978
|
МАРОККО
|
|
|
|
|
|
|
M25P20-VMN6 |
|
ИМС Flash 2,7V 2Mbit 50MHz SO8978
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
M25P20-VMN6 |
|
ИМС Flash 2,7V 2Mbit 50MHz SO8978
|
|
|
497.08
|
|
|
|
|
M25P20-VMN6 |
|
ИМС Flash 2,7V 2Mbit 50MHz SO8978
|
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC
|
|
|
|
|
|
|
M25P32-VMF6 |
|
ИМС Flash 2,7V 32Mbit 50MHz SOL1978
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
M25P32-VMF6 |
|
ИМС Flash 2,7V 32Mbit 50MHz SOL1978
|
|
|
908.00
|
|
|
|
|
M25P32-VMF6 |
|
ИМС Flash 2,7V 32Mbit 50MHz SOL1978
|
MICRON
|
|
|
|
|
|
|
M25P32-VMF6 |
|
ИМС Flash 2,7V 32Mbit 50MHz SOL1978
|
КИТАЙ
|
|
|
|
|
|
|
M27C1001-15F1 |
|
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
M27C1001-15F1 |
|
|
|
|
193.40
|
|
|
|
|
M27C1001-15F1 |
|
|
STMicroelectronics
|
|
|
|
|
|
|
M27C1001-15F1 |
|
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
|
M27C1001-70F1 |
|
ИМС UV-EPROM 5V
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
M27C1001-70F1 |
|
ИМС UV-EPROM 5V
|
|
|
226.04
|
|
|
|
|
M27C1001-70F1 |
|
ИМС UV-EPROM 5V
|
STMicroelectronics
|
|
|
|
|
|
|
M27C1001-70F1 |
|
ИМС UV-EPROM 5V
|
СИНГАПУР
|
|
|
|
|
|
|
M27C1001-70F1 |
|
ИМС UV-EPROM 5V
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
|
M27C1001-70F1 |
|
ИМС UV-EPROM 5V
|
ST1
|
|
|
|
|
|
|
M27C322-100F1 |
|
Память ПЗУ с УФ-стиранием 32Mbit (2M x 16bit), 100ns, Vcc=5.0V, 0 to +70C).
|
ST MICROELECTRONICS
|
7
|
314.88
|
|
|
|
|
M27C322-100F1 |
|
Память ПЗУ с УФ-стиранием 32Mbit (2M x 16bit), 100ns, Vcc=5.0V, 0 to +70C).
|
|
285
|
422.40
|
|
